LSIC2SD170B25 Series - GEN2 SiC Schottky Diode LSIC2SD170B25, 1700 V, 25 A, TO-247-2L

Littelfuse silicon carbide LSIC2SD170B10 LSIC2SD170B50 LSIC2SD170B25
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The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings.
SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency.
This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C.
These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.

Features:

  • Positive temperature coefficient
  • 175°C maximum operating junction temperature
  • Extremely fast, temperature-independent switching behavior
  • Nearly zero reverse recovery current
  • High surge capability
  • Low RthJC

Applications:

  • Boost diodes in PFC or DC/DC stages
  • Switch-mode power supplies
  • Uninterruptible power supplies
  • Solar inverters
  • Industrial motor drives
  • EV charging stations

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Access specifications, certifications, check availability and order parts below

Catalog #VRRM (V)Peak Forward Surge Current IFSM (A)QC (nC)TJ Max (°C)Forward Continuous Current IF (A)Reverse Current IR (µA)AEC-Q101 QualifiedVf (V)ConfigurationPartner ECAD ModelsStockSamples
LSIC2SD170B25170014417517525<1Yes1.5SingleLSIC2SD170B25CheckOrder
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