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Enhancement-mode SiC MOSFET, 1200 V, 80 mOhm, N-channel
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Voltage Rating (V): 1200
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Typical On-Resistance (mOhm): 80
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Current Rating (A): 25
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Enhancement-mode SiC MOSFET, 1200 V, 120 mOhm, N-channel
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Voltage Rating (V): 1200
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Typical On-Resistance (mOhm): 120
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Current Rating (A): 18
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Enhancement-mode SiC MOSFET, 1200 V, 160 mOhm, N-channel
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Voltage Rating (V): 1200
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Typical On-Resistance (mOhm): 160
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Current Rating (A): 14
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Enhancement-mode SiC MOSFET, 1700 V, 1 Ohm, N-channel
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Voltage Rating (V): 1700
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Typical On-Resistance (mOhm): 750
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Current Rating (A): 3.5
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SiC MOSFET in SOT227
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VDSS (V): 1200
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Rds(on) max @ 25°C (mΩ): 12, 34, 47, 48, 90, 98
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ID,cont @ 25 ℃ (A): 27, 50, 70, 90, 142
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