IXGK35N120B - Mid-Frequency Series

Series: Mid-Frequency
Questions? Contact Littelfuse Support
Littelfuse Power Semi TO-264 3 H 4R 1W2N 3L image
Roll Over to Zoom
Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 

300V  GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs.

600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range.

1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market.

To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost. 

Features:

  • High current handling capability
  • International standard packages
  • Optimized for low conduction & switching losses
  • Ultra fast anti-parallel diode (optional)
  • Avalanche rated
  • Square RBSOA
  • Low cost alternative to MOSFETs in the 300V range
  • Drive simplicity with MOS Gate turn-on
  • High frequency IGBT

Applications: 

  • Power inverters
  • UPS
  • Motor drives
  • SMPS
  • PFC circuits
  • Battery chargers
  • Welding machines
  • Lamp ballast
  • In-rush current protection circuits
  • DC choppers
  • Induction heating
  • Solar system inverters
  • Power Factor Correction Circuit
  • Uninterrupted power supply
  • Switch Mode power supply
  • Motor controls (ACAC/DC Motors)
  • Capacitive discharge switch

Contact Power Semiconductor Support


Property (Mouseover for details) Value
VCES Collector Emitter Voltage 1200
Collector Current @ 25 ℃ (A) 70
VCE(sat) - Collector-Emitter Saturation Voltage (V) 3.3
Fall Time [Inductive Load] (ns) 160
Configuration Single
Package Type TO-264
Status Active
Thermal resistance [junction-case] [IGBT] (K/W) 0.35
Turn-off Energy @ 125 ℃ (mJ) 8
Collector Current @ 110 ℃ (A) 35
To request product environmental information, please complete the Product Environmental Information Request Form.