IXTN90P20P - Polar™ Series

Series: Polar™
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Littelfuse Power Semi SOT-227 image
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Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient.

These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications.

Features:

  • Fast intrinsic diode
  • Rugged PolarP™ process
  • Avalanche rated
  • Low package inductance
  • Dynamic dv/dt rated

Advantages:

  • Low gate charge results in simple drive requirement
  • High power density
  • Easy to parallel
  • Fast switching

Applications:

  • High-side switching
  • Push pull amplifiers
  • DC-DC and DC-AC converters
  • Automatic test equipment
  • Battery charger applications
  • Current regulators
Check Stock
Property (Mouseover for details) Value
Drain-Source Voltage (V) -200
Maximum On-Resistance @ 25 ℃ (Ohm) 0.044
Continuous Drain Current @ 25 ℃ (A) -90
Gate Charge (nC) 205
Input Capacitance, CISS (pF) 12000
Thermal resistance [junction-case] (K/W) 0.14
Configuration Single
Package Type SOT-227
Typical Reverse Recovery Time (ns) 315
Power Dissipation (W) 890
Status Active
Sample Request No
Check Stock Yes
Partner ECAD Models IXTN90P20P
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